產品編碼 |
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TG2520CEN | 25.000000MHz | 2.50x2.00x0.80mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | -40 to ++85 °C |
X1G005161000727 | TG2520CEN | 32.000000MHz | 2.50x2.00x0.80mm | CMOS | 2.500 to 3.300 V | +/-2.0 ppm | -40 to ++85 °C |
X1G005161000927 | TG2520CEN | 27.000000MHz | 2.50x2.00x0.80mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | -40 to ++85 °C |
X1G005161001127 | TG2520CEN | 16.000000MHz | 2.50x2.00x0.80mm | CMOS | 2.500 to 3.300 V | +/-2.0 ppm | -40 to ++85 °C |
X1G005161001227 | TG2520CEN | 25.000000MHz | 2.50x2.00x0.80mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | -40 to ++85 °C |
X1G005161001327 | TG2520CEN | 48.000000MHz | 2.50x2.00x0.80mm | CMOS | 3.000 to 3.600 V | +/-2.0 ppm | -40 to ++85 °C |
X1G005161001427 | TG2520CEN | 20.000000MHz | 2.50x2.00x0.80mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | -40 to ++85 °C |
X1G005161001527 | TG2520CEN | 26.000000MHz | 2.50x2.00x0.80mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | -40 to ++85 °C |
X1G005161001927 | TG2520CEN | 38.400000MHz | 2.50x2.00x0.80mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | -40 to ++85 °C |
X1G005161002227 | TG2520CEN | 12.288000MHz | 2.50x2.00x0.80mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | -40 to ++85 °C |
X1G005161002327 | TG2520CEN | 12.000000MHz | 2.50x2.00x0.80mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | -40 to ++85 °C |
X1G005161002527 | TG2520CEN | 40.000000MHz | 2.50x2.00x0.80mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | -40 to ++85 °C |
X1G005161002627 | TG2520CEN | 24.000000MHz | 2.50x2.00x0.80mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | -40 to ++85 °C |
X1G005161002827 | TG2520CEN | 19.200000MHz | 2.50x2.00x0.80mm | CMOS | 2.375 to 3.630 V | +/-2.0 ppm | -40 to ++85 °C |
無線藍牙模塊應用晶振X1G005161001527溫補晶體振蕩器
現代電子技術日新月異的發展,使得石英晶體振蕩器廣泛應用于現代通信,導航,測量等領域的電子設備中;工程實際應用中許多設備都工作在溫度范圍變化較大的環境中,由于石英晶體諧振器自身特殊的物理特性,溫度的變化會導致晶體振蕩器的頻率發生偏移.此時晶體振蕩器就不能為設備提供穩定時鐘頻率,導致工作異常,而經過溫度補償晶振的石英晶體振蕩器彌補了這一缺陷,從而其應用更加廣泛.