LX系列：低電源電壓（0.9至1.5V），用于降低功耗晶振、簡化電源設計或電池操作
UJ、UK和UM系列：用于抑制諧波的削波正弦波輸出
WL系列：高精度，可在整個溫度范圍內實現嚴格的頻率精度
WL251系列編碼WL2511N0024.000000高精度CMOS具有嚴格溫度的晶體振蕩器
| WF7021B0622.080000 | Diodes Incorporated | SaRonix-eCera™ WF | 622.08MHz | ±5ppm |
| WF7021B0622.080000 | Diodes Incorporated | SaRonix-eCera™ WF | 622.08MHz | ±5ppm |
| WF7021B0622.080000 | Diodes Incorporated | SaRonix-eCera™ WF | 622.08MHz | ±5ppm |
| WF9021B0622.080000 | 百利通亞陶晶振 | SaRonix-eCera™ WF | 622.08MHz | ±5ppm |
| WF9021B0622.080000 | Diodes Incorporated | SaRonix-eCera™ WF | 622.08MHz | ±5ppm |
| WF9021B0622.080000 | Diodes Incorporated | SaRonix-eCera™ WF | 622.08MHz | ±5ppm |
| KD3270040 | Diodes Incorporated | SaRonix-eCera™ KD | 32.768kHz | ±25ppm |
| KD3270040 | Diodes Incorporated | SaRonix-eCera™ KD | 32.768kHz | ±25ppm |
| KD3270040 | Diodes Incorporated | SaRonix-eCera™ KD | 32.768kHz | ±25ppm |
| KD3270046Z | Diodes Incorporated | SaRonix-eCera™ KD | 32.768kHz | ±50ppm |
| KD3270046Z | Diodes Incorporated | SaRonix-eCera™ KD | 32.768kHz | ±50ppm |
| KD3270046Z | Diodes Incorporated | SaRonix-eCera™ KD | 32.768kHz | ±50ppm |
| JX5011C0056.000000 | Diodes Incorporated | SaRonix-eCera™ JX | 56MHz | ±50ppm |
| JX5011C0056.000000 | Diodes Incorporated | SaRonix-eCera™ JX | 56MHz | ±50ppm |
| JX5011C0056.000000 | Diodes Incorporated | SaRonix-eCera™ JX | 56MHz | ±50ppm |
| KK3270050 | Diodes Incorporated | SaRonix-eCera™ KK | 32.768kHz | ±25ppm |
| KK3270050 | Diodes Incorporated | SaRonix-eCera™ KK | 32.768kHz | ±25ppm |
| KK3270050 | Diodes Incorporated | SaRonix-eCera™ KK | 32.768kHz | ±25ppm |
| JT255CF0026.000000 | Diodes Incorporated | SaRonix-eCera™ JT | 26MHz | ±500ppb |
| JT255CF0026.000000 | Diodes Incorporated | SaRonix-eCera™ JT | 26MHz | ±500ppb |
| JT255CF0026.000000 | Diodes Incorporated | SaRonix-eCera™ JT | 26MHz | ±500ppb |
| FRBST1061 | Diodes Incorporated | SaRonix-eCera™ FR | 61.44MHz | ±50ppm |
| JT2551T0039.000000 | Diodes Incorporated | SaRonix-eCera™ JT | 39MHz | ±2.5ppm |
| JT2551T0039.000000 | Diodes Incorporated | SaRonix-eCera™ JT | 39MHz | ±2.5ppm |
| JT2551T0039.000000 | Diodes Incorporated | SaRonix-eCera™ JT | 39MHz | ±2.5ppm |
| KM3270004 | Diodes Incorporated | SaRonix-eCera™ KM | 32.768kHz | ±25ppm |
| FK2500021 | Diodes Incorporated | SaRonix-eCera™ FK | 25MHz | ±50ppm |
| FN4000159 | Diodes Incorporated | SaRonix-eCera™ FN | 40MHz | ±50ppm |
| FK0800003 | Diodes Incorporated | SaRonix-eCera™ FK | 8MHz | ±50ppm |
| PRBST1122 | Diodes Incorporated | SaRonix-eCera™ FR | 122.88MHz | ±50ppm |
亞陶SMD晶振WL251 XO系列是一款高精度CMOS具有嚴格溫度的晶體振蕩器系列在溫度范圍內的穩定性。小體積晶振尺寸2.5x2.0mm、高精度CMOS晶體振蕩器，它支持1.8V至3.3V供電，非常耗電低工作電流。它支持各種流行的頻率和溫度范圍。它是旨在滿足日益增長的非常緊張的需求具有標準XO特性的溫度穩定性。它為應用程序提供了一個很好的選擇需要嚴密的穩定性。
產品特點：
嚴格的溫度穩定性：>+/-5ppm
低電流：最大小于7mA。
擴展溫度支持高達 105℃
CMOS輸出電平
出色的相位噪聲
無鉛且符合RoHS標準
應用：網絡和基礎設施系統，GPS 和導航系統，無線通信，移動和基站，計量，工業和戶外系統，測試與測量
WL251系列編碼WL2511N0024.000000高精度CMOS具有嚴格溫度的晶體振蕩器
| PRBST1122 | Diodes Incorporated | SaRonix-eCera™ FR | 122.88MHz | ±50ppm |
| PRBST1122 | Diodes Incorporated | SaRonix-eCera™ FR | 122.88MHz | ±50ppm |
| KJ3270001 | Diodes Incorporated | SaRonix-eCera™ KJ | 32.768kHz | ±25ppm |
| KJ3270001 | Diodes Incorporated | SaRonix-eCera™ KJ | 32.768kHz | ±25ppm |
| KJ3270001 | Diodes Incorporated | SaRonix-eCera™ KJ | 32.768kHz | ±25ppm |
| FK2500022 | Diodes Incorporated | SaRonix-eCera™ FK | 25MHz | ±50ppm |
| FK2500022 | Diodes Incorporated | SaRonix-eCera™ FK | 25MHz | ±50ppm |
| FK5000013 | Diodes Incorporated | SaRonix-eCera™ FK | 50MHz | ±50ppm |
| FK5000013 | Diodes Incorporated | SaRonix-eCera™ FK | 50MHz | ±50ppm |
| FD2500050 | Diodes Incorporated | SaRonix-eCera™ FD | 25MHz | ±50ppm |
| FD2500050 | Diodes Incorporated | SaRonix-eCera™ FD | 25MHz | ±50ppm |
| FDSAS2062 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 62.5MHz | ±50ppm |
| FDSAS2062 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 62.5MHz | ±50ppm |
| FDSAS2062 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 62.5MHz | ±50ppm |
| FK1200011 | Diodes Incorporated | SaRonix-eCera™ FK | 12MHz | ±50ppm |
| FK1200011 | Diodes Incorporated | SaRonix-eCera™ FK | 12MHz | ±50ppm |
| FNSAS2075 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 75MHz | ±50ppm |
| FD6250012 | Diodes Incorporated | SaRonix-eCera™ FD | 62.5MHz | ±50ppm |
| KN3270028 | Diodes Incorporated | SaRonix-eCera™ KN | 32.768kHz | ±50ppm |
| KD3270032 | Diodes Incorporated | SaRonix-eCera™ KD | 32.768kHz | ±50ppm |
| KN3270031 | Diodes Incorporated | SaRonix-eCera™ KN | 32.768kHz | ±50ppm |
| KD3270042 | Diodes Incorporated | SaRonix-eCera™ KD | 32.768kHz | ±50ppm |
| KN3270022 | Diodes Incorporated | SaRonix-eCera™ KN | 32.768kHz | ±50ppm |
| KD3270036 | Diodes Incorporated | SaRonix-eCera™ KD | 32.768kHz | ±50ppm |
| KN3270032 | Diodes Incorporated | SaRonix-eCera™ KN | 32.768kHz | ±50ppm |
| KN3270033 | Diodes Incorporated | SaRonix-eCera™ KN | 32.768kHz | ±50ppm |
| KD3270034 | Diodes Incorporated | SaRonix-eCera™ KD | 32.768kHz | ±50ppm |
| KX3211B0032.768000 | Diodes Incorporated | SaRonix-eCera™ KX | 32.768kHz | ±25ppm |
| KX3211C0032.768000 | Diodes Incorporated | SaRonix-eCera™ KX | 32.768kHz | ±50ppm |
| KX3211E0032.768000 | Diodes Incorporated | SaRonix-eCera™ KX | 32.768kHz | ±50ppm |
| KX3211G0032.768000 | Diodes Incorporated | SaRonix-eCera™ KX | 32.768kHz | ±25ppm |
| KX3213B0032.768000 | Diodes Incorporated | SaRonix-eCera™ KX | 32.768kHz | ±25ppm |
| KX3213C0032.768000 | Diodes Incorporated | SaRonix-eCera™ KX | 32.768kHz | ±50ppm |
WL251系列編碼WL2511N0024.000000高精度CMOS具有嚴格溫度的晶體振蕩器
產品參數
| 類別 | XO將軍 |
|---|---|
| 產品系列 | WL2 |
| 合規性（僅汽車支持 PPAP） | 標準 |
| 頻率范圍 (MHz) | 10至52 |
| 抖動均方根 (ps) | <1 |
| 穩定性 (PPM) | 6 到 20 |
| 包裝尺寸（毫米） | 2.5x2.0晶振 |
| 包裝類型 | 陶瓷縫 |
| 輸出邏輯 | CMOS |
| 電源電壓 (V) | 3.3, 2.5, 1.8 |
| 墊 | 6 |
| WL251 | 標準 | CMOS | 3.32.51.8 | 6~20 | 10 至 52 | <1 | 6 | - | 1.8V/2.5V/3.3V、2.5x2.0mm、高精度CMOS晶體振蕩器 | |
|---|---|---|---|---|---|---|---|---|---|---|
| WL321 | 標準 | CMOS | 3.32.51.8 | 6~20 | 8 至 52 | <1 | 6 | - | 1.8V/2.5V/3.3V、3.2x2.5mm、高精度CMOS晶體振蕩器 | |
| WL501 | 標準 | CMOS | 3.32.51.8 | 6~20 | 8 至 52 | <1 | 6 | - | 1.8V/2.5V/3.3V、5.0x3.2mm、高精度CMOS晶體振蕩器 | |
| WL701 | 標準 | CMOS | 3.32.51.8 | 6~20 | 8 至 52 | <1 | 6 | - | 1.8V/2.5V/3.3V、7.0x5.0mm、高精度CMOS晶體振蕩器 | |
| WX501 | 標準 | CMOS | 3.32.5 | 20~50 | 50 至 212.5 | <1 | 4 | - | 2.5V/3.3V、5.0x3.2mm、PLL CMOS 晶體振蕩器 | |
| WX502 | 標準 | 聚氯乙烯 | 3.32.5 | 20~50 | 50 至 212.5 | <1 | 6 | - | 2.5V/3.3V、5.0x3.2mm、PLL LVPECL 晶體振蕩器 | |
| WX503 | 標準 | LVDS | 3.32.5 | 20~50 | 50 至 212.5 | <1 | 6 | - | 2.5V/3.3V、5.0x3.2mm、PLL LVDS 晶體振蕩器 | |
| WX701 | 標準 | CMOS | 3.32.5 | 20~50 | 50 至 212.5 | <1 | 4 | - | 2.5V/3.3V, 7.0x5.0mm, PLL CMOS 晶體振蕩器 | |
| WX702 | 標準 | 聚氯乙烯 | 3.32.5 | 20~50 | 50 至 212.5 | <1 | 6 | - | 2.5V/3.3V、7.0x5.0mm、PLL LVPECL 晶體振蕩器 |
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